Table of ContentsCathodoluminescence from Polytype Layers in Silicon Carbide Historical Background *Wide Indirect Bandgap SiC radiative recombination mechanisms are complex & phonon participation required Edge Topograph Polytype Model J59 central 5270 reflection 15R+6H+LPP(146H/438R)+1DD(300?m) SEM micrograph Cathodoluminescence crystal morphology polytype/disorder interface Experimental Techniques XRDT & CL Polytype Layers & SEM-CL Polytype model J77 6H+4H+LPP/1DD+6H J57 model 6H+15R+1DD(60?m)+4H Locating CL Long period polytypes (LPP’s)6 Summary SEM-CL, observed along silicon carbide crystal edges, is reported from regions containing defects & one-dimensionally (1DD) disordered layers. A qualitative description of the location of these features, the common 6H, 15R & 4H and long period polytypes (LPP’s) is possible using SRS XRDT as a comparative technique. Ordered 6H, 4H polytypes display CL. CL data is non quantitative. |
Author: Jim Kelly
Email: kelly@img.cryst.bbk.ac.uk Home Page: http://img.cryst.bbk.ac.uk/www/kelly/homepage.htm Best experienced with |
